Infineon Half Bridge HybridPACK N channel-Channel MOSFET Modules, 620 A, 750 V Enhancement, 30-Pin PG-TSON-12

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Subtotal (1 unit)*

Kr. 22 349,28

(exc. VAT)

Kr. 27 936,60

(inc. VAT)

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RS Stock No.:
762-980
Mfr. Part No.:
FS01MR08A8MA2CHPSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET Modules

Channel Type

N channel

Maximum Continuous Drain Current Id

620A

Maximum Drain Source Voltage Vds

750V

Package Type

PG-TSON-12

Series

HybridPACK

Mount Type

Screw

Pin Count

30

Maximum Drain Source Resistance Rds

8.3mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

20mW

Typical Gate Charge Qg @ Vgs

1.5μC

Minimum Operating Temperature

-40°C

Forward Voltage Vf

6.73V

Transistor Configuration

Half Bridge

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

COO (Country of Origin):
DE
The Infineon HybridPACK Drive G2 module utilizes silicon carbide (SiC) MOSFETs, offering a maximum voltage of 750 V and a nominal current of 620 A. Its design features low on-resistance, minimal switching losses, and a robust insulation capability of 4.25 kV. Engineered for high performance, it maintains operational temperatures up to 200°C.

Compact design

High power density

Direct-cooled PinFin base plate

Integrated temperature sensing diode

PressFIT contact technology

RoHS compliant, lead-free

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