Vishay TrenchFET Dual N-Channel Automotive MOSFET, 8 A, 40 V MOSFET, 8-Pin SO-8 SQ4940CEY-T1_BE3
- RS Stock No.:
- 790-419
- Mfr. Part No.:
- SQ4940CEY-T1_BE3
- Brand:
- Vishay
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View bulk pricing optionsSubtotal (1 tape of 10 units)*
Kr. 83,51
(exc. VAT)
Kr. 104,39
(inc. VAT)
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- Shipping from 21 December 2026
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Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | Kr. 8,351 | Kr. 83,51 |
| 100 - 490 | Kr. 5,171 | Kr. 51,71 |
| 500 - 990 | Kr. 4,004 | Kr. 40,04 |
| 1000 + | Kr. 2,746 | Kr. 27,46 |
*price indicative
- RS Stock No.:
- 790-419
- Mfr. Part No.:
- SQ4940CEY-T1_BE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Automotive MOSFET | |
| Channel Type | Dual N-Channel | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.024Ω | |
| Channel Mode | MOSFET | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 4W | |
| Typical Gate Charge Qg @ Vgs | 11.2nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Automotive MOSFET | ||
Channel Type Dual N-Channel | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.024Ω | ||
Channel Mode MOSFET | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 4W | ||
Typical Gate Charge Qg @ Vgs 11.2nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- DE
The Vishay Power MOSFET is designed for automotive applications, delivering efficient performance in demanding environments. It features dual N-channel functionality, Ideal for various electronic control systems.
Operates at a drain-source voltage of 40 V for reliable performance
AEC Q101 qualified to ensure high reliability in automotive applications
Designed for a maximum continuous drain current of 8 A, supporting high power demands
Material categorisation compliant with industry standards for environmental safety
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