Vishay TrenchFET P-Channel Automotive MOSFET, -4.4 A, 60 V MOSFET, 8-Pin SO-8 SQ4961CEY-T1_GE3
- RS Stock No.:
- 790-420
- Mfr. Part No.:
- SQ4961CEY-T1_GE3
- Brand:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 10 units)*
Kr. 90,60
(exc. VAT)
Kr. 113,20
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- Shipping from 04 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | Kr. 9,06 | Kr. 90,60 |
| 100 - 490 | Kr. 5,617 | Kr. 56,17 |
| 500 - 990 | Kr. 4,347 | Kr. 43,47 |
| 1000 + | Kr. 2,94 | Kr. 29,40 |
*price indicative
- RS Stock No.:
- 790-420
- Mfr. Part No.:
- SQ4961CEY-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P-Channel | |
| Product Type | Automotive MOSFET | |
| Maximum Continuous Drain Current Id | -4.4A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.085Ω | |
| Channel Mode | MOSFET | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Maximum Power Dissipation Pd | 3.3W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P-Channel | ||
Product Type Automotive MOSFET | ||
Maximum Continuous Drain Current Id -4.4A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.085Ω | ||
Channel Mode MOSFET | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Maximum Power Dissipation Pd 3.3W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- DE
The Vishay Power MOSFET offers high performance in automotive applications, featuring a dual P-channel configuration designed to effectively manage voltage up to 60V while operating in extreme temperature conditions of 175 °C.
AEC Q101 qualified for automotive reliability
100% R and UIS testing ensures consistent operation
Dual P-channel configuration increases design flexibility
Low on-state resistance enhances energy efficiency
Related links
- Vishay TrenchFET P-Channel Automotive MOSFET 30 V MOSFET, 8-Pin PowerPAK 1212-8SLW SQS135ELNW-T1_GE3
- Vishay TrenchFET N channel-Channel Automotive MOSFET 200 V MOSFET, 8-Pin PowerPAK 8 x 8 SQJQ190E-T1_GE3
- Vishay TrenchFET N channel-Channel Automotive MOSFET 100 V MOSFET, 8-Pin PowerPAK SO-8L SQJ114EP-T1_GE3
- Vishay TrenchFET Dual N-Channel Automotive MOSFET 40 V MOSFET, 8-Pin SO-8 SQ4940CEY-T1_BE3
- Vishay TrenchFET P-Channel MOSFET -12 V Enhancement, 6-Pin TSOP-6 SQ3461CEV-T1_GE3
- Vishay TrenchFET P-Channel MOSFET -20 V Enhancement, 6-Pin TSOP-6 SQ3469CEV-T1_GE3
- Vishay TrenchFET P-Channel MOSFET -40 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ141ELR-T1_GE3
- Vishay TrenchFET N channel-Channel Automotive MOSFET 80 V MOSFET, 4-Pin PowerPAK SO-8L SQJ183ELP-T1_GE3