STMicroelectronics STH285N10F8-6AG N channel-Channel Power MOSFET, 6 A, 1200 V Enhancement Mode, 3-Pin H2PAK-2

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Kr. 53,77

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Kr. 67,21

(inc. VAT)

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10 - 49Kr. 52,28
50 - 99Kr. 50,56
100 +Kr. 43,70

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RS Stock No.:
800-461
Mfr. Part No.:
STH8N120K5-2AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N channel

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

1200V

Series

STH285N10F8-6AG

Package Type

H2PAK-2

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.65mΩ

Channel Mode

Enhancement Mode

Maximum Power Dissipation Pd

165W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

14.4nC

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Length

10.4mm

Standards/Approvals

ECOPACK

Width

4.7mm

Height

15.8mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

AEC-Q101 qualified

Industry’s lowest RDS(on) x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

100% avalanche tested

Zener-protected

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