Vishay Half Bridge VS-H N-Channel MOSFET Modules, 195 A, 650 V Enhancement, 12-Pin FlatPAK 5 x 6 VS-HOT200C080

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Subtotal (1 unit)*

Kr. 402,20

(exc. VAT)

Kr. 502,75

(inc. VAT)

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  • Shipping from 15 January 2027
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1 - 4Kr. 402,20
5 +Kr. 394,17

*price indicative

RS Stock No.:
869-230
Mfr. Part No.:
VS-HOT200C080
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET Modules

Maximum Continuous Drain Current Id

195A

Maximum Drain Source Voltage Vds

650V

Package Type

FlatPAK 5 x 6

Series

VS-H

Mount Type

Screw

Pin Count

12

Maximum Drain Source Resistance Rds

0.91mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

130nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

194W

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

175°C

Transistor Configuration

Half Bridge

Height

12.7mm

Width

22.8mm

Standards/Approvals

UL 94 V-0

Length

30mm

Automotive Standard

No

COO (Country of Origin):
KR
The Vishay power module designed for half-bridge applications with Advanced features for current and temperature sensing. This innovative solution provides efficient power management and reliability.

Supports current and temperature sensing for enhanced reliability

Utilises an electrically isolated DBC substrate to minimise EMI

Passes rigorous AQG324 qualification for automotive applications

Operates at a maximum junction temperature of 175 °C, ensuring durability

Delivers low on-resistance values of 0.45 mΩ for improved efficiency

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