STMicroelectronics Enhancement Mode STL N-Channel Power MOSFET, 181 A, 80 V N, 8-Pin PowerFLAT STL180N8F8

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Subtotal (1 unit)*

Kr. 39,12

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Kr. 48,90

(inc. VAT)

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1 - 9Kr. 39,12
10 - 99Kr. 25,51
100 - 499Kr. 17,96
500 - 999Kr. 15,10
1000 +Kr. 14,30

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RS Stock No.:
898-600
Mfr. Part No.:
STL180N8F8
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

181A

Maximum Drain Source Voltage Vds

80V

Series

STL

Package Type

PowerFLAT

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

2.3mΩ

Channel Mode

N

Typical Gate Charge Qg @ Vgs

85nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

167W

Maximum Operating Temperature

175°C

Transistor Configuration

Enhancement Mode

Height

1mm

Width

5mm

Standards/Approvals

ECOPACK2

Length

5.8mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for Faster and more efficient switching.

MSL1 grade

100% avalanche tested

Low gate charge

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