Vishay TrenchFET N-Channel MOSFET, 14 A, 60 V Enhancement, 8-Pin PowerPAK SI7120BDN-T1-GE3
- RS Stock No.:
- 904-972
- Mfr. Part No.:
- SI7120BDN-T1-GE3
- Brand:
- Vishay
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Kr. 4,55
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Kr. 5,69
(inc. VAT)
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- Shipping from 22 February 2027
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Tape(s) | Per Tape |
|---|---|
| 1 - 24 | Kr. 4,55 |
| 25 - 99 | Kr. 2,94 |
| 100 + | Kr. 1,74 |
*price indicative
- RS Stock No.:
- 904-972
- Mfr. Part No.:
- SI7120BDN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | PowerPAK | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.021Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.3nC | |
| Maximum Power Dissipation Pd | 19.8W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Width | 3.3mm | |
| Standards/Approvals | ROHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type PowerPAK | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.021Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.3nC | ||
Maximum Power Dissipation Pd 19.8W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Width 3.3mm | ||
Standards/Approvals ROHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay N-Channel MOSFET designed for efficient power management, providing enhanced performance in various electronic applications through Advanced features and robust reliability.
TrenchFET Gen IV technology optimises efficiency and reduces power loss
100% tested for R and UIS, ensuring consistent reliability
Lead (Pb)-free construction adheres to environmental standards
Optimised switching characteristics support high-speed applications
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