Vishay TrenchFET Type N-Channel MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

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Subtotal (1 pack of 10 units)*

Kr. 102,85

(exc. VAT)

Kr. 128,56

(inc. VAT)

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Temporarily out of stock
  • Shipping from 28 June 2027
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Units
Per unit
Per Pack*
10 - 90Kr. 10,285Kr. 102,85
100 - 240Kr. 8,488Kr. 84,88
250 - 490Kr. 8,283Kr. 82,83
500 - 990Kr. 8,042Kr. 80,42
1000 +Kr. 7,848Kr. 78,48

*price indicative

Packaging Options:
RS Stock No.:
787-9409
Mfr. Part No.:
SISA10DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

34nC

Maximum Power Dissipation Pd

39W

Forward Voltage Vf

0.8V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.12mm

Length

3.4mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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