Vishay TrenchFET Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISA04DN-T1-GE3

View all MOSFETs
Bulk discount available

Subtotal (1 bag of 2 units)*

Kr.36 84 

(exc. VAT)

Kr.46 04 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 13. april 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Bag*
2 - 18Kr. 18,42Kr. 36,84
20 - 98Kr. 17,275Kr. 34,55
100 - 198Kr. 15,56Kr. 31,12
200 - 498Kr. 14,645Kr. 29,29
500 +Kr. 13,785Kr. 27,57

*price indicative

Packaging Options:
RS Stock No.:
768-9307
Mfr. Part No.:
SISA04DN-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.1mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

52W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.73V

Typical Gate Charge Qg @ Vgs

51nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

3.15 mm

Standards/Approvals

No

Length

3.15mm

Height

1.12mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links