Vishay TrenchFET Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISA04DN-T1-GE3

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Subtotal (1 bag of 2 units)*

Kr. 38,90

(exc. VAT)

Kr. 48,62

(inc. VAT)

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Units
Per unit
Per Bag*
2 - 18Kr. 19,45Kr. 38,90
20 - 98Kr. 18,245Kr. 36,49
100 - 198Kr. 16,475Kr. 32,95
200 - 498Kr. 15,445Kr. 30,89
500 +Kr. 14,53Kr. 29,06

*price indicative

Packaging Options:
RS Stock No.:
768-9307
Mfr. Part No.:
SISA04DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.1mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

51nC

Maximum Power Dissipation Pd

52W

Forward Voltage Vf

0.73V

Maximum Operating Temperature

150°C

Length

3.15mm

Standards/Approvals

No

Height

1.12mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


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