Vishay TrenchFET Type N-Channel MOSFET, 20 A, 100 V Enhancement, 8-Pin PowerPAK 1212

Subtotal (1 reel of 3000 units)*

Kr.11 325 00 

(exc. VAT)

Kr.14 157 00 

(inc. VAT)

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Temporarily out of stock
  • 3 000 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Reel*
3000 +Kr. 3,775Kr. 11 325,00

*price indicative

RS Stock No.:
228-2930
Mfr. Part No.:
SiSH892BDN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK 1212

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

30.4mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

17.4nC

Maximum Power Dissipation Pd

29W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 100 V (D-S) MOSFET PowerPAK.

100 % Rg and UIS tested

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