Vishay TrenchFET Type N-Channel MOSFET, 65 A, 40 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal (1 reel of 3000 units)*

Kr.11 664 00 

(exc. VAT)

Kr.14 580 00 

(inc. VAT)

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Per Reel*
3000 +Kr. 3,888Kr. 11 664,00

*price indicative

RS Stock No.:
228-2824
Mfr. Part No.:
SI7116BDN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

40V

Package Type

PowerPAK 1212

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.4mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

62.5W

Typical Gate Charge Qg @ Vgs

31.4nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

0.75mm

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-Channel power MOSFET is use for DC/DC primary side switch, Telecom / server, Motor drive control and Synchronous rectification.

Very low Qg and Qoss reduce power loss and

improve efficiency

Optimized Qg, Qgd, and Qgd/Qgs ratio reduces

switching related power loss

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