Nexperia Type N-Channel MOSFET, 91 A, 30 V Enhancement, 4-Pin SOT-669
- RS Stock No.:
- 103-8126
- Mfr. Part No.:
- PSMN5R0-30YL,115
- Brand:
- Nexperia
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 103-8126
- Mfr. Part No.:
- PSMN5R0-30YL,115
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 91A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-669 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 61W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Height | 1.1mm | |
| Width | 4.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 91A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-669 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 61W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Height 1.1mm | ||
Width 4.1 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
Related links
- Nexperia Type N-Channel MOSFET 30 V Enhancement115
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- Nexperia Type N-Channel MOSFET 30 V Enhancement115
- Nexperia Type N-Channel MOSFET 30 V Enhancement115
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