Nexperia Type N-Channel MOSFET, 91 A, 30 V Enhancement, 4-Pin SOT-669 PSMN5R0-30YL,115
- RS Stock No.:
- 798-2984
- Mfr. Part No.:
- PSMN5R0-30YL,115
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.73 44
(exc. VAT)
Kr.91 80
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 100 unit(s) shipping from 29. desember 2025
- Plus 20 unit(s) shipping from 29. desember 2025
- Plus 1 130 unit(s) shipping from 05. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 70 | Kr. 7,344 | Kr. 73,44 |
| 80 - 370 | Kr. 6,965 | Kr. 69,65 |
| 380 + | Kr. 5,875 | Kr. 58,75 |
*price indicative
- RS Stock No.:
- 798-2984
- Mfr. Part No.:
- PSMN5R0-30YL,115
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 91A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-669 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 61W | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Width | 4.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 91A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-669 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 61W | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Width 4.1 mm | ||
Automotive Standard No | ||
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
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