Infineon OptiMOS FD Type N-Channel MOSFET, 84 A, 200 V Enhancement, 3-Pin TO-263 IPB117N20NFDATMA1
- RS Stock No.:
- 110-7458
- Mfr. Part No.:
- IPB117N20NFDATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tape of 2 units)*
Kr.129 27
(exc. VAT)
Kr.161 588
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Final 2 unit(s), ready to ship
Units | Per unit | Per Tape* |
|---|---|---|
| 2 - 8 | Kr. 64,635 | Kr. 129,27 |
| 10 - 38 | Kr. 55,825 | Kr. 111,65 |
| 40 - 98 | Kr. 49,705 | Kr. 99,41 |
| 100 - 198 | Kr. 46,56 | Kr. 93,12 |
| 200 + | Kr. 44,215 | Kr. 88,43 |
*price indicative
- RS Stock No.:
- 110-7458
- Mfr. Part No.:
- IPB117N20NFDATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 84A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-263 | |
| Series | OptiMOS FD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 300W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 170°C | |
| Height | 4.57mm | |
| Width | 9.45 mm | |
| Standards/Approvals | IEC61249-2-21, JEDEC, Pb-free lead plating, RoHS | |
| Length | 10.31mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 84A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-263 | ||
Series OptiMOS FD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 300W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 170°C | ||
Height 4.57mm | ||
Width 9.45 mm | ||
Standards/Approvals IEC61249-2-21, JEDEC, Pb-free lead plating, RoHS | ||
Length 10.31mm | ||
Automotive Standard No | ||
RoHS Status: Not Applicable
Infineon OptiMOS™ FD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS FD Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS FD Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS FD Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-220 IPP220N25NFDAKSA1
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 IRF1010ESTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 IRF1010EZPBF
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 IRF1010EPBF
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220