Infineon OptiMOS FD Type N-Channel MOSFET, 84 A, 200 V Enhancement, 3-Pin TO-263 IPB117N20NFDATMA1

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Subtotal (1 tape of 2 units)*

Kr.52 89 

(exc. VAT)

Kr.66 112 

(inc. VAT)

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2 +Kr. 26,445Kr. 52,89

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Packaging Options:
RS Stock No.:
110-7458
Mfr. Part No.:
IPB117N20NFDATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

84A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-263

Series

OptiMOS FD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11.7mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

300W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

65nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

170°C

Width

9.45 mm

Height

4.57mm

Length

10.31mm

Standards/Approvals

IEC61249-2-21, JEDEC, Pb-free lead plating, RoHS

Automotive Standard

No

RoHS Status: Not Applicable

Infineon OptiMOS™ FD Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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