N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP Renesas RJK6012DPP-E0#T2
- RS Stock No.:
- 121-6898
- Mfr. Part No.:
- RJK6012DPP-E0#T2
- Brand:
- Renesas Electronics
In stock for same day dispatch
Not available for next day delivery
Added
Price Each (In a Pack of 2)
Kr. 28,255
(exc. VAT)
Kr. 35,319
(inc. VAT)
| Units | Per unit | Per Pack* |
| 2 - 8 | Kr. 28,255 | Kr. 56,51 |
| 10 - 18 | Kr. 24,235 | Kr. 48,47 |
| 20 - 98 | Kr. 21,19 | Kr. 42,38 |
| 100 - 198 | Kr. 16,98 | Kr. 33,96 |
| 200 + | Kr. 14,125 | Kr. 28,25 |
| *price indicative | ||
- RS Stock No.:
- 121-6898
- Mfr. Part No.:
- RJK6012DPP-E0#T2
- Brand:
- Renesas Electronics
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- KR
Product Details
N-Channel High Voltage MOSFETs 150V and Over, Renesas Electronics
MOSFET Transistors, Renesas Electronics (NEC)
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 10 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-220FP |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 920 mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 30 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | +30 V |
| Number of Elements per Chip | 1 |
| Width | 4.7mm |
| Typical Gate Charge @ Vgs | 30 nC @ 10 V |
| Length | 10.16mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Height | 15.87mm |
| Forward Diode Voltage | 1.5V |
- RS Stock No.:
- 121-6898
- Mfr. Part No.:
- RJK6012DPP-E0#T2
- Brand:
- Renesas Electronics