Renesas N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP RJK6012DPP-E0#T2
- RS Stock No.:
- 121-6898
- Mfr. Part No.:
- RJK6012DPP-E0#T2
- Brand:
- Renesas Electronics
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr. 56,51
(exc. VAT)
Kr. 70,638
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | Kr. 28,255 | Kr. 56,51 |
| 10 - 18 | Kr. 24,235 | Kr. 48,47 |
| 20 - 98 | Kr. 21,19 | Kr. 42,38 |
| 100 - 198 | Kr. 16,98 | Kr. 33,96 |
| 200 + | Kr. 14,125 | Kr. 28,25 |
*price indicative
- RS Stock No.:
- 121-6898
- Mfr. Part No.:
- RJK6012DPP-E0#T2
- Brand:
- Renesas Electronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220FP | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 920 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 30 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | +30 V | |
| Width | 4.7mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 30 nC @ 10 V | |
| Length | 10.16mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Height | 15.87mm | |
| Forward Diode Voltage | 1.5V | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 920 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 30 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage +30 V | ||
Width 4.7mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 30 nC @ 10 V | ||
Length 10.16mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Height 15.87mm | ||
Forward Diode Voltage 1.5V | ||
- COO (Country of Origin):
- KR
N-Channel High Voltage MOSFETs 150V and Over, Renesas Electronics
MOSFET Transistors, Renesas Electronics (NEC)
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