onsemi QFET Type P-Channel MOSFET, 17 A, 60 V Enhancement, 3-Pin TO-220 FQP17P06
- RS Stock No.:
- 124-1755
- Mfr. Part No.:
- FQP17P06
- Brand:
- onsemi
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Add 100 more to save Kr. 357,20
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Kr. 862,35
(exc. VAT)
Kr. 1 077,95
(inc. VAT)
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In Stock
- 950 unit(s) ready to ship
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Units | Per unit | Per Tube* | Saving |
|---|---|---|---|
| 50 - 50 | Kr. 17,247 | Kr. 862,35 | - |
| 100 - 450 | Kr. 13,675 | Kr. 683,75 | Kr. 357,20 |
| 500 - 950 | Kr. 11,591 | Kr. 579,55 | Kr. 2 828,00 |
| 1000 - 1950 | Kr. 9,433 | Kr. 471,65 | Kr. 7 814,00 |
| 2000 + | Kr. 9,399 | Kr. 469,95 | Kr. 15 696,00 |
*price indicative
- RS Stock No.:
- 124-1755
- Mfr. Part No.:
- FQP17P06
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Series | QFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 79W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Forward Voltage Vf | -4V | |
| Maximum Gate Source Voltage Vgs | -25V, +25V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.7mm | |
| Standards/Approvals | No | |
| Length | 10.1mm | |
| Height | 9.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Series QFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 79W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Forward Voltage Vf -4V | ||
Maximum Gate Source Voltage Vgs -25V, +25V | ||
Maximum Operating Temperature 175°C | ||
Width 4.7mm | ||
Standards/Approvals No | ||
Length 10.1mm | ||
Height 9.4mm | ||
Automotive Standard No | ||
QFET® P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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