onsemi QFET Type P-Channel MOSFET, 19 A, 60 V Enhancement, 3-Pin TO-220 FQPF27P06
- RS Stock No.:
- 807-5901
- Mfr. Part No.:
- FQPF27P06
- Brand:
- onsemi
Subtotal (1 pack of 10 units)*
Kr.282 80
(exc. VAT)
Kr.353 50
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- 990 unit(s) shipping from 04. februar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 + | Kr. 28,28 | Kr. 282,80 |
*price indicative
- RS Stock No.:
- 807-5901
- Mfr. Part No.:
- FQPF27P06
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Series | QFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -4V | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 120W | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 16.3mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Width | 4.7 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Series QFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -4V | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 120W | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 16.3mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Width 4.7 mm | ||
Automotive Standard No | ||
QFET® P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductors new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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