ROHM QS6M3 Dual N/P-Channel MOSFET, 1.5 A, 20 V, 30 V, 6-Pin TSMT QS6M3TR

Brand

ROHM

Channel Type

N, P

Maximum Continuous Drain Current

1.5 A

Maximum Drain Source Voltage

20 V, 30 V

Package Type

TSMT

Series

QS6M3

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Dual Base

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

2

Transistor Material

Si

Width

1.6mm

Length

2.9mm

Typical Gate Charge @ Vgs

1.6 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

0.85mm

Forward Diode Voltage

1.2V