Infineon HEXFET Type N-Channel MOSFET, 99 A, 60 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2000 units)*

Kr.18 206 00 

(exc. VAT)

Kr.22 758 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2000 +Kr. 9,103Kr. 18 206,00

*price indicative

RS Stock No.:
124-8776
Mfr. Part No.:
IRLR3636TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

99A

Maximum Drain Source Voltage Vds

60V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8.3mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

49nC

Maximum Power Dissipation Pd

143W

Maximum Gate Source Voltage Vgs

16 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

6.22 mm

Length

6.73mm

Height

2.39mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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