Infineon HEXFET Type N-Channel MOSFET, 11 A, 55 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 3000 units)*

Kr.46 746 00 

(exc. VAT)

Kr.58 434 00 

(inc. VAT)

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RS Stock No.:
222-4615
Mfr. Part No.:
AUIRFR9024NTRL
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.18mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

38W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

19nC

Forward Voltage Vf

-1.6V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.22mm

Height

2.39mm

Width

6.73 mm

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced process technology

Ultra-low on-resistance Fast switching

Lead-Free, RoHS Compliant

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