Infineon HEXFET Type N-Channel MOSFET, 11 A, 55 V Enhancement, 3-Pin TO-252 AUIRFR9024NTRL

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

Kr.170 86 

(exc. VAT)

Kr.213 58 

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 3 390 unit(s), ready to ship
Units
Per unit
Per Pack*
10 - 40Kr. 17,086Kr. 170,86
50 - 90Kr. 16,233Kr. 162,33
100 - 240Kr. 15,558Kr. 155,58
250 - 490Kr. 14,872Kr. 148,72
500 +Kr. 13,842Kr. 138,42

*price indicative

Packaging Options:
RS Stock No.:
222-4616
Mfr. Part No.:
AUIRFR9024NTRL
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.18mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

38W

Forward Voltage Vf

-1.6V

Typical Gate Charge Qg @ Vgs

19nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

2.39mm

Length

6.22mm

Width

6.73 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced process technology

Ultra-low on-resistance Fast switching

Lead-Free, RoHS Compliant

Related links