Infineon HEXFET Type N-Channel MOSFET, 11 A, 55 V Enhancement, 3-Pin TO-252 AUIRFR9024NTRL
- RS Stock No.:
- 222-4616
- Mfr. Part No.:
- AUIRFR9024NTRL
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr. 186,13
(exc. VAT)
Kr. 232,66
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Final 3 130 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | Kr. 18,613 | Kr. 186,13 |
| 50 - 90 | Kr. 17,698 | Kr. 176,98 |
| 100 - 240 | Kr. 16,943 | Kr. 169,43 |
| 250 - 490 | Kr. 16,199 | Kr. 161,99 |
| 500 + | Kr. 15,078 | Kr. 150,78 |
*price indicative
- RS Stock No.:
- 222-4616
- Mfr. Part No.:
- AUIRFR9024NTRL
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.18mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.6V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Power Dissipation Pd | 38W | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.73 mm | |
| Height | 2.39mm | |
| Standards/Approvals | No | |
| Length | 6.22mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.18mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.6V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Power Dissipation Pd 38W | ||
Maximum Operating Temperature 150°C | ||
Width 6.73 mm | ||
Height 2.39mm | ||
Standards/Approvals No | ||
Length 6.22mm | ||
Automotive Standard No | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Advanced process technology
Ultra-low on-resistance Fast switching
Lead-Free, RoHS Compliant
Related links
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type P-Channel MOSFET -55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 IRFR9024NTRPBF
- Infineon HEXFET Type P-Channel MOSFET -55 V Enhancement, 3-Pin TO-252 IRFR9024NTRLPBF
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin IPAK
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin IPAK IRFU9024NPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252