Infineon HEXFET Type P-Channel MOSFET, 11 A, 55 V Enhancement, 3-Pin TO-252 IRFR9024NTRPBF

RS Stock No.:: 827-4088
Mfr. Part No.:: IRFR9024NTRPBF
Brand:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 11 A, 55 V Enhancement, 3-Pin TO-252 IRFR9024NTRPBF

Bulk discount available

Subtotal (1 pack of 20 units)*

Kr.183 50

(exc. VAT)

Kr.229 38

(inc. VAT)

FREE delivery for online orders over 500,00 kr

In Stock

Plus 1 060 unit(s) shipping from 29. desember 2025
Plus 180 unit(s) shipping from 29. desember 2025
Plus 10 300 unit(s) shipping from 05. januar 2026

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Units	Per unit	Per Pack*
20 - 80	Kr. 9,175	Kr. 183,50
100 - 180	Kr. 7,156	Kr. 143,12
200 - 480	Kr. 6,698	Kr. 133,96
500 - 980	Kr. 6,229	Kr. 124,58
1000 +	Kr. 5,789	Kr. 115,78

*price indicative

RS Stock No.:: 827-4088
Mfr. Part No.:: IRFR9024NTRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	11A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	175mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	19nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	38W
	Forward Voltage Vf	-1.6V
	Maximum Operating Temperature	150°C
	Length	6.73mm
	Height	2.39mm
	Width	6.22 mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 11A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 175mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 19nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 38W
	Forward Voltage Vf -1.6V
	Maximum Operating Temperature 150°C
	Length 6.73mm
	Height 2.39mm
	Width 6.22 mm
	Standards/Approvals No
	Automotive Standard No

Infineon HEXFET Series MOSFET, 11A Maximum Continuous Drain Current, 38W Maximum Power Dissipation - IRFR9024NTRPBF

This P-channel MOSFET, utilising HEXFET technology, delivers efficient performance across a range of electronic applications. Its robust attributes make it a Crucial component for users in automation, electronics, as well as the electrical and mechanical sectors. The product is adept at managing high current loads while ensuring effective control in power circuits.

Features & Benefits

• Maximum continuous drain current of 11A facilitates high-performance applications

• Can withstand drain-source voltage of up to 55V for increased reliability

• Low RDS(on) of 175 mΩ minimises power loss during operation

• Enhancement mode design optimises efficiency for various uses

• DPAK TO-252 surface mount package simplifies PCB integration and assembly

Applications

• Effective energy management in power supply circuits

• Suitable for motor control needing high current

• Utilised in DC-DC converters for improved efficiency

• Ideal for load switching due to Rapid response times

• Employed in industrial automation systems for added reliability

What is the maximum power dissipation of this component?

It has a maximum power dissipation capability of 38W.

How does the product handle gate voltages?

The gate can accommodate voltages ranging from -20 V to +20 V, allowing design flexibility.

What is the thermal performance of the device?

It operates safely at a maximum temperature of 150 °C, ensuring reliability in diverse environments.

Is it easy to mount on a PCB?

Yes, the DPAK TO-252 package enables straightforward surface mounting on printed circuit boards.

How does this MOSFET perform under varying temperatures?

It remains functional within a wide temperature range of -55 °C to +150 °C, catering to diverse application needs.