Infineon HEXFET Type P-Channel MOSFET, 18 A, 55 V Enhancement, 3-Pin TO-252 IRFR5505TRPBF

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Subtotal (1 pack of 20 units)*

Kr.157 08 

(exc. VAT)

Kr.196 36 

(inc. VAT)

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  • Plus 80 unit(s) shipping from 29. desember 2025
  • Plus 4 600 unit(s) shipping from 05. januar 2026
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Units
Per unit
Per Pack*
20 - 80Kr. 7,854Kr. 157,08
100 - 180Kr. 7,459Kr. 149,18
200 - 480Kr. 7,145Kr. 142,90
500 - 980Kr. 6,67Kr. 133,40
1000 +Kr. 6,281Kr. 125,62

*price indicative

Packaging Options:
RS Stock No.:
827-4072
Mfr. Part No.:
IRFR5505TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

57W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.6V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

32nC

Maximum Operating Temperature

150°C

Height

2.39mm

Length

6.73mm

Standards/Approvals

No

Width

6.22 mm

Automotive Standard

No

Distrelec Product Id

304-44-466

P-Channel Power MOSFET 40V to 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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