N-Channel MOSFET, 210 A, 60 V, 3-Pin TO-220AB Infineon IRFB3206PBF
- RS Stock No.:
- 124-8962
- Mfr. Part No.:
- IRFB3206PBF
- Brand:
- Infineon
1850 In stock for same day dispatch
Price Each (In a Tube of 50)
Kr. 14,563
(exc. VAT)
Kr. 18,204
(inc. VAT)
| Units | Per unit | Per Tube* |
| 50 - 50 | Kr. 14,563 | Kr. 728,15 |
| 100 - 200 | Kr. 12,963 | Kr. 648,15 |
| 250 - 450 | Kr. 12,088 | Kr. 604,40 |
| 500 - 950 | Kr. 11,421 | Kr. 571,05 |
| 1000 + | Kr. 11,134 | Kr. 556,70 |
| *price indicative | ||
- RS Stock No.:
- 124-8962
- Mfr. Part No.:
- IRFB3206PBF
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 210 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | TO-220AB |
| Series | HEXFET |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 3 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 300 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 120 nC @ 10 V |
| Length | 10.67mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +175 °C |
| Width | 4.83mm |
| Number of Elements per Chip | 1 |
| Height | 9.02mm |
| Minimum Operating Temperature | -55 °C |