Toshiba DTMOSIV Type N-Channel MOSFET, 30.8 A, 600 V Enhancement, 3-Pin TO-220 TK31E60X,S1X(S
- RS Stock No.:
- 125-0563
- Mfr. Part No.:
- TK31E60X,S1X(S
- Brand:
- Toshiba
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.107 31
(exc. VAT)
Kr.134 138
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 4 unit(s) shipping from 19. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | Kr. 53,655 | Kr. 107,31 |
| 10 - 18 | Kr. 39,24 | Kr. 78,48 |
| 20 - 48 | Kr. 38,325 | Kr. 76,65 |
| 50 - 98 | Kr. 37,125 | Kr. 74,25 |
| 100 + | Kr. 36,495 | Kr. 72,99 |
*price indicative
- RS Stock No.:
- 125-0563
- Mfr. Part No.:
- TK31E60X,S1X(S
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30.8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | DTMOSIV | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 88mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.7V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 230W | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.45 mm | |
| Height | 15.1mm | |
| Length | 10.16mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30.8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series DTMOSIV | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 88mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.7V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 230W | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Maximum Operating Temperature 150°C | ||
Width 4.45 mm | ||
Height 15.1mm | ||
Length 10.16mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Related links
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