N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220SIS Toshiba TK31A60W,S4VX(M

RS Stock No.:: 891-2954
Mfr. Part No.:: TK31A60W,S4VX(M
Brand:: Toshiba

N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220SIS Toshiba TK31A60W,S4VX(M

28 In stock for same day dispatch

4 available from Europe for delivery within 1 working day(s)

Price Each (In a Pack of 2)

Kr. 34,33

(exc. VAT)

Kr. 42,91

(inc. VAT)

Units	Per unit	Per Pack*
2 - 8	Kr. 34,33	Kr. 68,66
10 - 18	Kr. 25,885	Kr. 51,77
20 - 48	Kr. 22,275	Kr. 44,55
50 - 98	Kr. 21,94	Kr. 43,88
100 +	Kr. 21,665	Kr. 43,33

*price indicative

RS Stock No.:: 891-2954
Mfr. Part No.:: TK31A60W,S4VX(M
Brand:: Toshiba

TK31A60W, Silicon N-Channel DTMOS MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	31 A
Maximum Drain Source Voltage	600 V
Series	TK
Package Type	TO-220SIS
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	88 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Maximum Power Dissipation	45 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Length	10mm
Typical Gate Charge @ Vgs	86 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Width	4.5mm
Number of Elements per Chip	1
Height	15mm
Forward Diode Voltage	1.7V

N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220SIS Toshiba TK31A60W,S4VX(M

MOSFET N-Channel, TK3x Series, Toshiba