Infineon CoolMOS P6 Type N-Channel MOSFET, 23.8 A, 650 V Enhancement, 3-Pin TO-263 IPB60R160P6ATMA1

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Subtotal (1 pack of 2 units)*

Kr.60 22 

(exc. VAT)

Kr.75 28 

(inc. VAT)

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2 +Kr. 30,11Kr. 60,22

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Packaging Options:
RS Stock No.:
130-0894
Mfr. Part No.:
IPB60R160P6ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

23.8A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-263

Series

CoolMOS P6

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

160mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

176W

Typical Gate Charge Qg @ Vgs

44nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Width

4.57 mm

Height

9.45mm

Length

10.31mm

Standards/Approvals

No

Automotive Standard

No

Infineon CoolMOS™E6/P6 series Power MOSFET


The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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