Infineon HEXFET Type N-Channel MOSFET, 61 A, 100 V Enhancement, 3-Pin TO-263 IRFS4510TRLPBF
- RS Stock No.:
- 130-1005
- Mfr. Part No.:
- IRFS4510TRLPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.160 49
(exc. VAT)
Kr.200 61
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 740 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 32,098 | Kr. 160,49 |
| 50 - 120 | Kr. 27,272 | Kr. 136,36 |
| 125 - 245 | Kr. 25,672 | Kr. 128,36 |
| 250 - 495 | Kr. 23,75 | Kr. 118,75 |
| 500 + | Kr. 22,148 | Kr. 110,74 |
*price indicative
- RS Stock No.:
- 130-1005
- Mfr. Part No.:
- IRFS4510TRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 61A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 13.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 140W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Width | 9.65 mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 61A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 13.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 140W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Width 9.65 mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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