Dual N-Channel MOSFET, 15 A, 20 V, 3 + Tab-Pin SA Infineon IRL6297SDTRPBF
- RS Stock No.:
- 130-1012
- Mfr. Part No.:
- IRL6297SDTRPBF
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 130-1012
- Mfr. Part No.:
- IRL6297SDTRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 15 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SA | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 + Tab | |
| Maximum Drain Source Resistance | 6.9 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.1V | |
| Minimum Gate Threshold Voltage | 0.5V | |
| Maximum Power Dissipation | 25 W | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 2 | |
| Width | 3.95mm | |
| Typical Gate Charge @ Vgs | 54 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 4.4mm | |
| Height | 0.62mm | |
| Forward Diode Voltage | 1.2V | |
| Series | DirectFET, HEXFET | |
| Minimum Operating Temperature | -40 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 15 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SA | ||
Mounting Type Surface Mount | ||
Pin Count 3 + Tab | ||
Maximum Drain Source Resistance 6.9 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.1V | ||
Minimum Gate Threshold Voltage 0.5V | ||
Maximum Power Dissipation 25 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 2 | ||
Width 3.95mm | ||
Typical Gate Charge @ Vgs 54 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 4.4mm | ||
Height 0.62mm | ||
Forward Diode Voltage 1.2V | ||
Series DirectFET, HEXFET | ||
Minimum Operating Temperature -40 °C | ||
DirectFET® Power MOSFET, Infineon
The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.
Industry lowest on-resistance in their respective footprints
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm
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