MPN

Toshiba U-MOSVIII-H N-Channel MOSFET, 21 A, 100 V, 8-Pin TSON TPN3300ANH,LQ(S

RS Stock No.:: 133-2815
Mfr. Part No.:: TPN3300ANH,LQ(S
Brand:: Toshiba

Toshiba U-MOSVIII-H N-Channel MOSFET, 21 A, 100 V, 8-Pin TSON TPN3300ANH,LQ(S

Unavailable

RS will no longer stock this product.

RS Stock No.:: 133-2815
Mfr. Part No.:: TPN3300ANH,LQ(S
Brand:: Toshiba

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Toshiba
	Channel Type	N
	Maximum Continuous Drain Current	21 A
	Maximum Drain Source Voltage	100 V
	Series	U-MOSVIII-H
	Package Type	TSON
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	33 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	27 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	3.1mm
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	11 nC @ 10 V
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Length	3.1mm
	Height	0.85mm
	Forward Diode Voltage	1.2V

	Select all
	Brand Toshiba
	Channel Type N
	Maximum Continuous Drain Current 21 A
	Maximum Drain Source Voltage 100 V
	Series U-MOSVIII-H
	Package Type TSON
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 33 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 27 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 3.1mm
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 11 nC @ 10 V
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Length 3.1mm
	Height 0.85mm
	Forward Diode Voltage 1.2V

COO (Country of Origin):: JP

MOSFET Transistors, Toshiba

Toshiba U-MOSVIII-H N-Channel MOSFET, 21 A, 100 V, 8-Pin TSON TPN3300ANH,LQ(S

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