N-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON Infineon BSZ0506NSATMA1
- RS Stock No.:
- 133-9869
- Mfr. Part No.:
- BSZ0506NSATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr. 84,25
(exc. VAT)
Kr. 105,31
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | Kr. 8,425 | Kr. 84,25 |
| 50 - 240 | Kr. 7,48 | Kr. 74,80 |
| 250 - 1240 | Kr. 6,555 | Kr. 65,55 |
| 1250 - 2490 | Kr. 5,621 | Kr. 56,21 |
| 2500 + | Kr. 4,653 | Kr. 46,53 |
*price indicative
- RS Stock No.:
- 133-9869
- Mfr. Part No.:
- BSZ0506NSATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 40 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | TSDSON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 5.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 27 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | +20 V | |
| Width | 3.4mm | |
| Length | 3.4mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 11 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.1V | |
| Series | OptiMOS 5 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.1mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type TSDSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 5.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 27 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage +20 V | ||
Width 3.4mm | ||
Length 3.4mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 11 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.1V | ||
Series OptiMOS 5 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
- COO (Country of Origin):
- MY