Vishay SiR632DP Type N-Channel MOSFET, 29 A, 150 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 3000 units)*

Kr.20 064 00 

(exc. VAT)

Kr.25 080 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 6,688Kr. 20 064,00

*price indicative

RS Stock No.:
134-9159
Mfr. Part No.:
SIR632DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

150V

Series

SiR632DP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

41mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

14nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1.2V

Maximum Power Dissipation Pd

69.5W

Maximum Operating Temperature

150°C

Height

1.12mm

Standards/Approvals

No

Length

6.25mm

Width

5.26 mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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