Vishay SiR Type N-Channel MOSFET, 26.8 A, 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5710DP-T1-RE3
- RS Stock No.:
- 268-8335
- Mfr. Part No.:
- SIR5710DP-T1-RE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.98 27
(exc. VAT)
Kr.122 84
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 6 050 unit(s) shipping from 02. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 19,654 | Kr. 98,27 |
| 50 - 95 | Kr. 17,664 | Kr. 88,32 |
| 100 - 245 | Kr. 13,774 | Kr. 68,87 |
| 250 - 995 | Kr. 13,476 | Kr. 67,38 |
| 1000 + | Kr. 8,968 | Kr. 44,84 |
*price indicative
- RS Stock No.:
- 268-8335
- Mfr. Part No.:
- SIR5710DP-T1-RE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 26.8A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | SiR | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0315Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Power Dissipation Pd | 56.8W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 5.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 26.8A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series SiR | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0315Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Power Dissipation Pd 56.8W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 5.15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N channel TrenchFET generation 5 power MOSFET is lead Pb and halogen free device. It is used in applications such as synchronous rectification, motor drive control, power supplies.
Very low figure of merit
ROHS compliant
UIS tested 100 percent
Related links
- Vishay Dual Silicon N-Channel MOSFET 150 V, 8-Pin PowerPAK SO-8 SIR5710DP-T1-RE3
- Vishay Dual Silicon N-Channel MOSFET 150 V, 8-Pin PowerPAK SO-8 SIR5708DP-T1-RE3
- Vishay Dual Silicon N-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8 SIR184LDP-T1-RE3
- Vishay Dual Silicon N-Channel MOSFET 40 V, 8-Pin PowerPAK SO-8 SiRA54ADP-T1-RE3
- Vishay Dual Silicon N-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8DC SIDR626EP-T1-RE3
- Vishay Dual Silicon N-Channel MOSFET 150 V, 4-Pin PowerPAK 8 x 8L SIJH5700E-T1-GE3
- Vishay Dual Silicon N-Channel MOSFET 150 V, 8-Pin PowerPAK 1212-8S SISS5708DN-T1-GE3
- Vishay Dual Silicon N-Channel MOSFET 150 V, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3