onsemi SupreMOS Type N-Channel MOSFET, 45.8 A, 600 V Enhancement, 3-Pin TO-247

Bulk discount available

Subtotal (1 tube of 30 units)*

Kr.2 227 71 

(exc. VAT)

Kr.2 784 63 

(inc. VAT)

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Last RS stock
  • Final 90 unit(s), ready to ship
Units
Per unit
Per Tube*
30 - 30Kr. 74,257Kr. 2 227,71
60 +Kr. 70,543Kr. 2 116,29

*price indicative

RS Stock No.:
145-5482
Mfr. Part No.:
FCH47N60NF
Brand:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45.8A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-247

Series

SupreMOS

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

121nC

Maximum Power Dissipation Pd

368W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Length

15.87mm

Width

4.82 mm

Height

20.82mm

Automotive Standard

No

SupreMOS® MOSFET, Fairchild Semiconductor


Fairchild brings a new generation of 600V Super-Junction MOSFETs - SupreMOS®.

The combination of their low RDS(on) and total gate charge brings a 40 percent lower Figure of Merit (FOM) compared to Fairchild's 600V SuperFET™ MOSFETs. In addition, the SupreMOS family offers a low gate charge for the same RDS(on), providing excellent switching performance and delivering 20 percent less switching and conduction losses, resulting in higher efficiency.

These features enable power supplies to meet ENERGY STAR® 80 PLUS Gold classification for desktop PCs and Platinum classification for servers.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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