Infineon HEXFET Type N-Channel MOSFET, 106 A, 75 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 800 units)*

Kr.13 012 80 

(exc. VAT)

Kr.16 265 60 

(inc. VAT)

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Units
Per unit
Per Reel*
800 +Kr. 16,266Kr. 13 012,80

*price indicative

RS Stock No.:
145-8930
Mfr. Part No.:
IRF3808STRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

106A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

7.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

150nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

200W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

11.3 mm

Standards/Approvals

No

Length

10.67mm

Height

4.83mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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