Infineon OptiMOS 3 Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-262 IPI086N10N3GXKSA1

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Subtotal (1 tube of 50 units)*

Kr.608 85 

(exc. VAT)

Kr.761 05 

(inc. VAT)

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50 +Kr. 12,177Kr. 608,85

*price indicative

RS Stock No.:
145-9306
Mfr. Part No.:
IPI086N10N3GXKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS 3

Package Type

TO-262

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

15.4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

42nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

125W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Length

10.36mm

Height

11.177mm

Width

4.57 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

Infineon OptiMOS™ 3 Series MOSFET, 80A Maximum Continuous Drain Current, 125W Maximum Power Dissipation - IPI086N10N3GXKSA1


This MOSFET is designed for high-efficiency power management applications and is suitable for various sectors, including automation and electronics. With a continuous drain current of 80A and a maximum drain-source voltage of 100V, it offers a dependable and efficient solution for electronic systems.

Features & Benefits


• N-channel design optimises electrical performance

• Low RDS(on) reduces power losses

• High power dissipation capability accommodates intensive applications

• Enhanced gate threshold improves switching efficiency

• Through hole mounting allows easy integration into circuits

Applications


• Used for high-frequency switching in power supplies

• Facilitates synchronous rectification in converter circuits

• Suitable for industrial automation systems requiring efficient power control

• Applied in various electronic devices for enhanced energy efficiency

• Appropriate for automotive requiring consistent performance

What is the significance of the low RDS(on) in this device?


The low RDS(on) value minimises energy losses during switching, increasing overall system performance.

How does the MOSFET handle high temperatures?


It is designed to function at temperatures up to 175°C, ensuring consistent performance even in challenging environmental conditions.

What mounting type does this component require?


It features a through hole mounting design that facilitates straightforward integration into existing PCB layouts.

Is it suitable for use in synchronous rectification?


Yes, it is specifically designed for efficient synchronous rectification in power electronics, promoting overall energy savings.

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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