Infineon OptiMOS 3 Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

Kr.21 492 50 

(exc. VAT)

Kr.26 865 00 

(inc. VAT)

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Per Reel*
2500 +Kr. 8,597Kr. 21 492,50

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RS Stock No.:
214-9027
Mfr. Part No.:
IPD082N10N3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

OptiMOS 3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8.2mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

125W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

42nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

2.41mm

Standards/Approvals

No

Length

6.73mm

Width

6.22 mm

Automotive Standard

No

The Infineon 100V OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). Ideal for high-frequency switching and synchronous rectification. Potential Applications includes Class D audio amplifiers, Isolated DC-DC converters etc.

It has 175 °C operating temperature

Qualified according to JEDEC for target applications

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