Infineon Isolated OptiMOS 2 Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-88 2N7002DWH6327XTSA1

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Subtotal (1 reel of 3000 units)*

Kr.1 824 00 

(exc. VAT)

Kr.2 280 00 

(inc. VAT)

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3000 - 3000Kr. 0,608Kr. 1 824,00
6000 - 12000Kr. 0,578Kr. 1 734,00
15000 +Kr. 0,553Kr. 1 659,00

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RS Stock No.:
145-9487
Mfr. Part No.:
2N7002DWH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

300mA

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS

Package Type

SC-88

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

4Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

0.4nC

Forward Voltage Vf

0.96V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

500mW

Minimum Operating Temperature

-55°C

Transistor Configuration

Isolated

Maximum Operating Temperature

150°C

Width

1.25 mm

Standards/Approvals

No

Length

2mm

Height

0.8mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN

Infineon OptiMOS™ Dual Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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