Infineon Isolated OptiMOS 2 Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-88

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Kr.203 50 

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Kr.254 50 

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Units
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Per Reel*
500 - 500Kr. 0,407Kr. 203,50
1000 - 2000Kr. 0,386Kr. 193,00
2500 - 4500Kr. 0,348Kr. 174,00
5000 +Kr. 0,345Kr. 172,50

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RS Stock No.:
827-0002
Mfr. Part No.:
2N7002DWH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

300mA

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS

Package Type

SC-88

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

4Ω

Channel Mode

Enhancement

Forward Voltage Vf

0.96V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

500mW

Typical Gate Charge Qg @ Vgs

0.4nC

Transistor Configuration

Isolated

Maximum Operating Temperature

150°C

Width

1.25 mm

Standards/Approvals

No

Length

2mm

Height

0.8mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Infineon OptiMOS™ Dual Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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