Infineon Isolated OptiMOS 2 N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-88

RS Stock No.:: 827-0002
Mfr. Part No.:: 2N7002DWH6327XTSA1
Brand:: Infineon

Infineon Isolated OptiMOS 2 N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-88

Bulk discount available

View bulk pricing options

Subtotal (1 reel of 500 units)*

Kr. 615,00

(exc. VAT)

Kr. 770,00

(inc. VAT)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Reel*
500 - 500	Kr. 1,23	Kr. 615,00
1000 - 2000	Kr. 1,169	Kr. 584,50
2500 - 4500	Kr. 1,052	Kr. 526,00
5000 +	Kr. 1,046	Kr. 523,00

*price indicative

RS Stock No.:: 827-0002
Mfr. Part No.:: 2N7002DWH6327XTSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	300mA
	Maximum Drain Source Voltage Vds	60V
	Series	OptiMOS
	Package Type	SC-88
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	4Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	0.4nC
	Forward Voltage Vf	960mV
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Maximum Power Dissipation Pd	500mW
	Transistor Configuration	Isolated
	Maximum Operating Temperature	150°C
	Length	2mm
	Standards/Approvals	No
	Width	1.25mm
	Height	800μm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 300mA
	Maximum Drain Source Voltage Vds 60V
	Series OptiMOS
	Package Type SC-88
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 4Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 0.4nC
	Forward Voltage Vf 960mV
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs -20V, +20V
	Maximum Power Dissipation Pd 500mW
	Transistor Configuration Isolated
	Maximum Operating Temperature 150°C
	Length 2mm
	Standards/Approvals No
	Width 1.25mm
	Height 800μm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

Infineon OptiMOS Series MOSFET, 60V Drain Source Voltage, 4Ω Drain Source Resistance - 2N7002DWH6327XTSA1

This MOSFET is a surface-mount N-channel transistor designed for low-power switching in constrained assemblies. It operates in enhancement mode and combines two elements on a single chip to deliver compact dual-die switching suitable for automotive-rated and industrial environments. The device is intended for board-level applications requiring modest current handling and controlled on-resistance.

Features and Benefits:

• 60V drain rating enables higher-voltage switching applications
• 4Ω maximum Rds reduces conduction losses during on-state
• 300mA continuous drain current supports low-current loads
• 0.4nC typical gate charge allows fast, efficient switching
• 500mW power dissipation suits low-power, thermally limited designs
• -55°C to 150°C operating range ensures thermal endurance

Applications

• Suitable for microcontroller-driven load switching
• Ideal for interfacing sensors in automotive systems
• Used with battery-management balancing circuits
• Can be used for small relay replacement duties
• Appropriate for compact SMD power-path control

What package and pin count should I prepare for PCB layout?

The device is supplied in a small SC-88 surface-mount package with six pins, so pads and thermal relief should match the SC-88 footprint.

How does the dual-element chip affect parallel operation?

Two elements on the same die permit compact dual-channel arrangements without external matching, but total thermal limits remain per package.

What gate and drain voltage limits must be observed?

The gate-source voltage must not exceed ±20V while the drain-source voltage limit is 60V to avoid device stress.

What forward voltage can be expected when conducting?

A forward voltage measurement of approximately 0.96V applies under specified test conditions for relevant conduction paths.