Infineon Isolated OptiMOS 2 Type P, Type N-Channel MOSFET, 1.5 A, 20 V Enhancement, 6-Pin TSOP

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Subtotal (1 reel of 3000 units)*

Kr.5 853 00 

(exc. VAT)

Kr.7 317 00 

(inc. VAT)

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Per Reel*
3000 +Kr. 1,951Kr. 5 853,00

*price indicative

RS Stock No.:
166-1086
Mfr. Part No.:
BSL215CH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P, Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.5A

Maximum Drain Source Voltage Vds

20V

Series

OptiMOS

Package Type

TSOP

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.8V

Maximum Power Dissipation Pd

500mW

Maximum Gate Source Voltage Vgs

12 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

3nC

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Height

1mm

Width

1.6 mm

Standards/Approvals

No

Length

2.9mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

COO (Country of Origin):
MY

Infineon OptiMOS™ Dual Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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