Nexperia Type N-Channel MOSFET, 270 mA, 60 V Enhancement, 3-Pin SOT-23 NX7002BKR

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Subtotal (1 reel of 3000 units)*

Kr.915 00 

(exc. VAT)

Kr.1 143 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 0,305Kr. 915,00

*price indicative

RS Stock No.:
151-2607
Mfr. Part No.:
NX7002BKR
Brand:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

270mA

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.8Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

1nC

Maximum Power Dissipation Pd

1.67W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

1.4 mm

Height

1mm

Length

3mm

Automotive Standard

No

COO (Country of Origin):
CN
Logic- and Standard Level MOSFETs in a variety of packages, Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).

60 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic-level compatible

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

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