DiodesZetex 2 Type N-Channel MOSFET, 100 V Enhancement, 6-Pin UDFN-2020 DMN10H6D2LFDB-7
- RS Stock No.:
- 246-7507
- Mfr. Part No.:
- DMN10H6D2LFDB-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 25 units)*
Kr.74 825
(exc. VAT)
Kr.93 525
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 2 925 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | Kr. 2,993 | Kr. 74,83 |
| 50 - 75 | Kr. 2,942 | Kr. 73,55 |
| 100 - 225 | Kr. 2,174 | Kr. 54,35 |
| 250 - 975 | Kr. 2,096 | Kr. 52,40 |
| 1000 + | Kr. 2,055 | Kr. 51,38 |
*price indicative
- RS Stock No.:
- 246-7507
- Mfr. Part No.:
- DMN10H6D2LFDB-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | UDFN-2020 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 0.7W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.2nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type UDFN-2020 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 0.7W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.2nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in U-DFN2020-6 packaging. It offers fast switching and high efficiency. It offers an ESD protected gate (up to 1kV).
Maximum drain to source voltage is 100 V Maximum gate to source voltage is ±20 V It offers a low gate threshold voltage It provides a low input capacitance
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