Nexperia BUK9M34100E Type N-Channel MOSFET, 29 A, 100 V Enhancement, 4-Pin LFPAK

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Subtotal (1 reel of 1500 units)*

Kr.8 019 00 

(exc. VAT)

Kr.10 023 00 

(inc. VAT)

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  • 4 500 unit(s) shipping from 17. juni 2026
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Units
Per unit
Per Reel*
1500 +Kr. 5,346Kr. 8 019,00

*price indicative

RS Stock No.:
152-7740
Mfr. Part No.:
BUK9M34-100EX
Brand:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

100V

Series

BUK9M34100E

Package Type

LFPAK

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

97mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

79W

Typical Gate Charge Qg @ Vgs

24.7nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

15 V

Maximum Operating Temperature

175°C

Width

2.6 mm

Length

3.4mm

Height

0.9mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

N-channel 100 V, 34 mΩ logic level MOSFET in LFPAK33, Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175 °C rating

True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C

12 V, 24 V and 48 V automotive systems

Motors, lamps and solenoid control

Transmission control

Ultra high performance power switching

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