MPN

Nexperia Type N-Channel MOSFET, 3.9 A, 30 V Enhancement, 3-Pin SOT-23 PMV50ENEAR

RS Stock No.:: 153-0664
Mfr. Part No.:: PMV50ENEAR
Brand:: Nexperia

Nexperia Type N-Channel MOSFET, 3.9 A, 30 V Enhancement, 3-Pin SOT-23 PMV50ENEAR

Bulk discount available

Subtotal (1 pack of 25 units)*

Kr.104 55

(exc. VAT)

Kr.130 70

(inc. VAT)

FREE delivery for online orders over 500,00 kr

Temporarily out of stock

Shipping from 06. juli 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
25 - 225	Kr. 4,182	Kr. 104,55
250 - 600	Kr. 2,389	Kr. 59,73
625 - 1225	Kr. 2,338	Kr. 58,45
1250 - 2475	Kr. 2,27	Kr. 56,75
2500 +	Kr. 2,219	Kr. 55,48

*price indicative

RS Stock No.:: 153-0664
Mfr. Part No.:: PMV50ENEAR
Brand:: Nexperia

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Nexperia
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	3.9A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	69mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	3.9W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	6nC
	Maximum Operating Temperature	150°C
	Height	1mm
	Standards/Approvals	No
	Length	3mm
	Width	1.4 mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Nexperia
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 3.9A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 69mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 3.9W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 6nC
	Maximum Operating Temperature 150°C
	Height 1mm
	Standards/Approvals No
	Length 3mm
	Width 1.4 mm
	Automotive Standard AEC-Q101

30V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic level compatible

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

AEC-Q101 qualified

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

Nexperia Type N-Channel MOSFET, 3.9 A, 30 V Enhancement, 3-Pin SOT-23 PMV50ENEAR

FREE delivery for online orders over 500,00 kr

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