Nexperia Dual Trench MOSFET 2 Type N-Channel Trench MOSFET, 260 mA, 60 V Enhancement, 8-Pin DFN NX7002BKXBZ
- RS Stock No.:
- 153-1880
- Mfr. Part No.:
- NX7002BKXBZ
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 pack of 50 units)*
Kr.212 00
(exc. VAT)
Kr.265 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 06. juli 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | Kr. 4,24 | Kr. 212,00 |
| 250 - 1200 | Kr. 1,906 | Kr. 95,30 |
| 1250 - 2450 | Kr. 1,483 | Kr. 74,15 |
| 2500 - 3700 | Kr. 1,439 | Kr. 71,95 |
| 3750 + | Kr. 1,409 | Kr. 70,45 |
*price indicative
- RS Stock No.:
- 153-1880
- Mfr. Part No.:
- NX7002BKXBZ
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | Trench MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 260mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DFN | |
| Series | Trench MOSFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.7Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 4032mW | |
| Typical Gate Charge Qg @ Vgs | 1nC | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | -55°C | |
| Length | 1.15mm | |
| Height | 0.36mm | |
| Width | 1.05 mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type Trench MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 260mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DFN | ||
Series Trench MOSFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.7Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 4032mW | ||
Typical Gate Charge Qg @ Vgs 1nC | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature -55°C | ||
Length 1.15mm | ||
Height 0.36mm | ||
Width 1.05 mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
N-channel MOSFETs 40 V - 60 V, Logic- and Standard Level MOSFETs in a variety of packages, Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).
60 V, dual N-channel Trench MOSFET, Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Logic-level compatible
Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
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