Nexperia PMCM4401VNE Type N-Channel MOSFET, 6 A, 12 V Enhancement, 4-Pin WLCSP PMCM4401VNEAZ

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Subtotal (1 pack of 25 units)*

Kr.74 60 

(exc. VAT)

Kr.93 25 

(inc. VAT)

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Units
Per unit
Per Pack*
25 +Kr. 2,984Kr. 74,60

*price indicative

Packaging Options:
RS Stock No.:
153-2892
Mfr. Part No.:
PMCM4401VNEAZ
Brand:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

12V

Package Type

WLCSP

Series

PMCM4401VNE

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

120mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

8 V

Typical Gate Charge Qg @ Vgs

6nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

12.5W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Height

0.16mm

Length

0.81mm

Standards/Approvals

No

Width

0.81 mm

Automotive Standard

No

N-channel MOSFETs ≤ 20 V, Get the optimum switching solutions for your portable designs, Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.

12V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

Low threshold voltage

Ultra small package: 0.78 x 0.78 x 0.35 mm

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

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