Nexperia PMCM4401VNE Type N-Channel MOSFET, 6 A, 12 V Enhancement, 4-Pin WLCSP

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Subtotal (1 reel of 9000 units)*

Kr.12 969 00 

(exc. VAT)

Kr.16 209 00 

(inc. VAT)

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Units
Per unit
Per Reel*
9000 +Kr. 1,441Kr. 12 969,00

*price indicative

RS Stock No.:
153-2851
Mfr. Part No.:
PMCM4401VNEAZ
Brand:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

12V

Series

PMCM4401VNE

Package Type

WLCSP

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

120mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

8 V

Maximum Power Dissipation Pd

12.5W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

0.16mm

Length

0.81mm

Width

0.81 mm

Automotive Standard

No

N-channel MOSFETs ≤ 20 V, Get the optimum switching solutions for your portable designs, Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.

12V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

Low threshold voltage

Ultra small package: 0.78 x 0.78 x 0.35 mm

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

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