STMicroelectronics STI28 Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin I2PAK

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Subtotal (1 tube of 50 units)*

Kr.1 076 60 

(exc. VAT)

Kr.1 345 75 

(inc. VAT)

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  • Shipping from 27. april 2026
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Units
Per unit
Per Tube*
50 - 50Kr. 21,532Kr. 1 076,60
100 - 200Kr. 20,972Kr. 1 048,60
250 - 450Kr. 20,434Kr. 1 021,70
500 +Kr. 19,917Kr. 995,85

*price indicative

RS Stock No.:
164-6960
Mfr. Part No.:
STI28N60M2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

22A

Maximum Drain Source Voltage Vds

650V

Package Type

I2PAK

Series

STI28

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

150mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

170W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

36nC

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Width

4.6 mm

Standards/Approvals

No

Length

10.4mm

Height

9.3mm

Automotive Standard

No

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

Extremely low gate charge

Excellent output capacitance (COSS ) profile

100% avalanche tested

Zener-protected

Extremely low Qg for increased efficiency

Optimized gate charge and capacitance profiles for resonant power supplies (LLC converters)

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