Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC Vishay SI4900DY-T1-GE3
- RS Stock No.:
- 165-3003
- Mfr. Part No.:
- SI4900DY-T1-GE3
- Brand:
- Vishay
Available to back order for despatch 07.10.2024
Price Each (On a Reel of 2500)
Kr. 5,013
(exc. VAT)
Kr. 6,266
(inc. VAT)
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | Kr. 5,013 | Kr. 12 532,50 |
*price indicative
- RS Stock No.:
- 165-3003
- Mfr. Part No.:
- SI4900DY-T1-GE3
- Brand:
- Vishay
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- TW
Product Details
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 4.3 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 58 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 2 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 4mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 13 nC @ 10 V |
| Length | 5mm |
| Number of Elements per Chip | 2 |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Height | 1.55mm |