Infineon OptiMOS N-Channel MOSFET, 30 A, 75 V Enhancement, 3-Pin TO-252 IPD30N08S2L21ATMA1

RS Stock No.:: 165-5971
Mfr. Part No.:: IPD30N08S2L21ATMA1
Brand:: Infineon

Infineon OptiMOS N-Channel MOSFET, 30 A, 75 V Enhancement, 3-Pin TO-252 IPD30N08S2L21ATMA1

Subtotal (1 reel of 2500 units)*

Kr. 18 567,50

(exc. VAT)

Kr. 23 210,00

(inc. VAT)

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Units	Per unit	Per Reel*
2500 +	Kr. 7,427	Kr. 18 567,50

*price indicative

RS Stock No.:: 165-5971
Mfr. Part No.:: IPD30N08S2L21ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	75V
	Series	OptiMOS
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	26mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	136W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	56nC
	Forward Voltage Vf	0.9V
	Maximum Gate Source Voltage Vgs	-20, +20V
	Maximum Operating Temperature	175°C
	Length	6.73mm
	Width	6.22mm
	Standards/Approvals	No
	Height	2.41mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 75V
	Series OptiMOS
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 26mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 136W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 56nC
	Forward Voltage Vf 0.9V
	Maximum Gate Source Voltage Vgs -20, +20V
	Maximum Operating Temperature 175°C
	Length 6.73mm
	Width 6.22mm
	Standards/Approvals No
	Height 2.41mm
	Automotive Standard AEC-Q101

RoHS Status: Not Applicable

COO (Country of Origin):: CN

Infineon OptiMOS Series MOSFET, 75V Maximum Drain Source Voltage, 30A Maximum Continuous Drain Current - IPD30N08S2L21ATMA1

This MOSFET is a power switching transistor designed for demanding electronic systems, providing controlled conduction between drain and source in N-channel enhancement-mode configurations. It is intended for surface-mount assembly in compact power designs and for use where elevated operating temperatures and automotive-grade qualification are required.

Features and Benefits:

• 75V drain voltage enabling robust high-voltage switching
• 30A continuous current supporting substantial load delivery
• 26mΩ low Rds(on) reducing conduction losses
• 136W dissipation capacity aiding thermal margin in designs
• 56nC typical gate charge improving switching speed control
• ±20V gate tolerance allowing flexible gate-drive schemes

Applications

• Suitable for automotive DC-DC converter stages
• Ideal for synchronous rectification in power supplies
• Used with motor-drive inverter front-end circuits
• Can be used for high-efficiency point-of-load converters
• Suitable for board-level power management in vehicles

What packaging type should designers expect for PCB layout?

The device is supplied in a TO-252 package intended for surface mounting, which affects land-pattern and thermal-pad design.

How does the device handle extreme ambient conditions?

It is rated to operate across a wide temperature span from -55°C up to 175°C to suit high-temperature environments.

What gate-drive considerations are required for control circuitry?

The maximum gate-source rating is ±20V

gate-drive circuits should limit excursions within this range and account for the 56nC typical gate charge when sizing drivers.

Are there specific thermal performance constraints to plan for?

With a maximum power dissipation of 136W, thermal management must consider conduction paths and board-level heat sinking to maintain junction limits.